Nanomanufacturing of silicon surface with a single atomic layer precision via mechanochemical reactions

Single Atomic Layer Ferroelectric on Silicon.

A single atomic layer of ZrO2 exhibits ferroelectric switching behavior when grown with an atomically abrupt interface on silicon. Hysteresis in capacitance-voltage measurements of a ZrO2 gate stack demonstrate that a reversible polarization of the ZrO2 interface structure couples to the carriers in the silicon. First-principles computations confirm the existence of multiple stable polarization...

Atomic scale memory at a silicon surface

The limits of pushing storage density to the atomic scale are explored with a memory that stores a bit by the presence or absence of one silicon atom. These atoms are positioned at lattice sites along self-assembled tracks with a pitch of five atom rows. The memory can be initialized and reformatted by controlled deposition of silicon. The writing process involves the transfer of Si atoms to th...

A quantum chemical study of ZrO2 atomic layer deposition growth reactions on the SiO2 surface

Zirconium oxide (ZrO2) is one of the leading candidates to replace silicon oxide (SiO2) as the gate dielectric for future generation metal-oxide-semiconductor (MOS) based nanoelectronic devices. Experimental studies have shown that a 1–3 monolayer SiO2 film between the high permittivity metal oxide and the substrate silicon is needed to minimize electrical degradation. This study uses density f...

Production of Titanium Carbide via Mechanochemical Process

Production of Titanium Carbide via Mechanochemical Process